Publications
1. Naoya Kishimoto, Gen Taguchi, Yoichi Tsuchiya, Debaleen Biswas*, Qiang Ma, Hidemasa Takahashi, Yuji Ando, Akio Wakejima, High Efficiency Rectification Characteristics at 2.4 GHz with AlGaN/GaN GADs for Microwave WPT, IEEE Microw. Wireless Technol. Lett., 35, 310 (2025).
2. Debaleen Biswas*, Arijit Bose, Qiang Ma, Yoichi Tsuchiya, Hidemasa Takahashi, Yuji Ando, Akio Wakejima, Gated-Anode Diodes for Microwave Rectifiers for Wireless Power Transmission (WPT) Applications: A Simulation Study on DC and RF Characteristics, J. Comput. Electron., 23, 1368 (2024).
3. Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications, IEICE Trans. Electron., E105-C, 457 (2022).
4. Arijit Bose, Debaleen Biswas*, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima, Influence of Thick Nitride Layer on Transmission Loss in GaN-on-3C-SiC/Low Resistivity Si, IEICE Electron. Express, 19, 1 (2022).
5. Debaleen Biswas*, Takuya Tsuboi, Takashi Egawa, GaN/InGaN Double Quantum Well (DQW) Gate Structure for GaN-on-Si Based Normally-Off AlGaN/GaN High Electron Mobility Transistors (HEMTs), Mater. Sci. Semicond. Process., 135, 106109 (2021).
6. Arijit Bose, Debaleen Biswas*, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima, Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si, IEEE Access, 9, 57046 (2021).
7. Arijit Bose, Debaleen Biswas*, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, Akio Wakejima, Elimination of the Low Resistivity of Si Substrate in GaN HEMT by Introducing SiC Intermediate and Thick Nitride Layers, IEEE Electron Device Lett., 41, 1480 (2020).
8. Debaleen Biswas*, Naoki Torii, Keiji Yamamoto, Takashi Egawa, Epitaxial Regrowth and Characterizations of Vertical GaN Transistors on Silicon, Semicond. Sci. Technol., 34, 095013 (2019).
9. Debaleen Biswas*, Hirotaka Fujita, Naoki Torii, Takashi Egawa, Effect of In Composition on Electrical Performance of AlInGaN/GaN-Based Metal-Insulator-Semiconductor HEMTs on Si, J. Appl. Phys., 125, 225707 (2019). [Editor’s Pick]
10. Debaleen Biswas*, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo, Takashi Egawa, Trap State Characterization of Al₂O₃/AlInGaN/GaN MIS Heterostructures, Semicond. Sci. Technol., 34, 055014 (2019).
11. Debaleen Biswas*, Naoki Torii, Keiji Yamamoto, Takashi Egawa, Demonstration of Fully-Vertical GaN-on-Si Power MOSFETs Using Regrowth Technique, Electron. Lett., 55, 404 (2019).
12. Somnath Mahato, Cristobal Voz, Debaleen Biswas, Satyaban Bhunia, Joaquim Puigdollers, Defect States Assisted Charge Conduction in Au/MoO₃‒x/n-Si Schottky Barrier Diode, Mater. Res. Express, 6, 036303 (2018).
13. Somnath Mahato, Debaleen Biswas, Luis G. Gerling, Cristobal Voz, Joaquim Puigdollers, Analysis of Temperature-Dependent I–V and C–V Characteristics of an Au/V₂O₅/n-Si Schottky Diode, AIP Adv., 7, 085313 (2017).
14. Abhishek Rakshit, Arijit Bose, Debaleen Biswas, Madhusudan Roy, Radhaballabh Bhar, Supratic Chakraborty, Control of Interfacial Layer Growth During Deposition of High-κ Oxide Thin Films with Reactive RF-Sputtering, Appl. Surf. Sci., 423, 957 (2017).
15. Debaleen Biswas, Shyamal Mondal, Abhishek Rakshit, Arijit Bose, Satyaranjan Bhattacharyya, Supratic Chakraborty, Size and Density Controlled Ag Nanocluster Embedded MOS Structure for Memory Applications, Mater. Sci. Semicond. Process., 63, 1 (2017).
16. Debaleen Biswas, Ayan Chakraborty, Supratic Chakraborty, Role of Annealing Temperatures in the Oxide Charge Distribution in High-κ MOS Devices: Simulation and Experiment, J. Comput. Electron., 15, 795 (2016).
17. Debaleen Biswas, Anil Kumar Sinha, Supratic Chakraborty, Effects of Oxygen Partial Pressure and Annealing Temperature on the Residual Stress of HfO₂ Thin Films on Si Using Synchrotron-Based GI-XRD, Appl. Surf. Sci., 384, 376 (2016).
18. Debaleen Biswas, Manavendra Narayan Singh, Anil Kumar Sinha, Satyaranjan Bhattacharyya, Supratic Chakraborty, Effect of Excess Hafnium on HfO₂ Crystallization Temperature and Leakage Current Behaviour of HfO₂/Si MOS Devices, J. Vac. Sci. Technol. B, 34, 022201 (2016).
19. Sk Abdul Kader Md Faruque, Debaleen Biswas, Saibal Saha, Supratic Chakraborty, Development of a Linear Temperature Ramp-Based Automated System for Furnace Oxidation of Semiconductor Wafers, Int. J. Instrum. Technol., 1, 259 (2015).
20. Debaleen Biswas, Anil Kumar Sinha, Supratic Chakraborty, Optimization of Annealing Temperature for High-κ Gate Oxides Using Differential Scanning Calorimetry, J. Vac. Sci. Technol. B, 33, 052205 (2015).
21. Debaleen Biswas, Sk Abdul Kader Md Faruque, Anil Kumar Sinha, Anuj Upadhyay, Supratic Chakraborty, Effect of Thermal Annealing and Oxygen Partial Pressure on the Swelling of HfO₂/SiO₂/Si MOS Structures Grown by RF Sputtering: A Synchrotron X-Ray Reflectivity Study, Appl. Phys. Lett., 105, 113511 (2014).
