Research

Dr. Debaleen Biswas’s research advances semiconductor materials and devices for high-power, RF/microwave, cryogenic, sensing, and emerging quantum-electronics applications. His research combines GaN and III-nitride device engineering, cleanroom microfabrication, DC/RF characterization, and advanced simulation to address challenges in power electronics, high-frequency communication, low-noise circuits, and reliable semiconductor technologies. Students working with Dr. Biswas can gain hands-on experience in device design, fabrication, electrical and RF measurement, materials characterization, and TCAD-based modeling—preparing them for careers in the semiconductor industry and academia.

Research Interest: 

• GaN and III-nitride devices for high-power and RF/microwave applications.
• Vertical GaN diodes, MOSFETs, and FinFET device engineering.
• Quaternary-nitride heterostructures and polarization-engineered devices.
• Cryogenic devices, low-noise electronics, and quantum-control circuits.
• Dielectric, interface, reliability, and trapping engineering in semiconductor devices.
• Ferroelectric and nonvolatile-memory devices.
• Plasmonics-enhanced photovoltaics and semiconductor optoelectronics.
• Semiconductor biosensors, radiation detectors, and emerging electronic materials.
• 2D/3D hybrid van der Waals heterostructures, tunneling devices, and neuromorphic electronics.
• Device modeling - TCAD, electrothermal, electromagnetic, and Monte Carlo simulations.